Junction FET
The Junction FET transistor is a type of field effect transistor that can be used as an electrically controlled switch. The electric energy flows through an active channel between sources to drain terminals. By applying a reverse bias voltage to gate terminal, the channel is strained so the electric current is switched off completely.
N channel JFET consists of an n type bar at the sides of which two p type layers are doped. The channel of electrons constitutes the N channel for the device. Two ohmic contacts are made at both ends of the N-channel device, which are connected together to form the gate terminal.
The source and drain terminals are taken from the other two sides of the bar. The potential difference between source and drain terminals is termed as Vdd and potential difference between source and gate terminal is termed as Vgs. The charge flow is due to flow of electrons from source to drain.
Whenever a positive voltage is applied across drain and source terminals, electrons flows from the source ‘S’ to drain ‘D’ terminal , where as conventional drain current Id flows through the drain to source. As current flows through the device, it is in on state.
When a negative polarity voltage is applied to the gate terminal, a depletion region is created in the channel. The channel width is reduced, hence increasing the channel resistance between the source and drain. Since the gate source junction is reverse biased and no current flows in the device, it is in off condition.
So basically if voltage applied at the gate terminal is increased, less amount of current will flow from the source to drain.
The N channel JFET has greater conductivity than the P channel JFET. So the N channel JFET is more efficient conductor compared to P channel JFET.